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Proceedings Paper

SEM simulation for 2D and 3D inspection metrology and defect review
Author(s): Shimon Levi; Ishai Schwartsband; Sergey Khristo; Yan Ivanchenko; Ofer Adan
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Paper Abstract

Advanced SEM simulation has become a key element in the ability of SEM inspection, metrology and defect review to meet the challenges of advanced technologies. It grants additional capabilities to the end user, such as 3D height measurements, accurate virtual metrology, and supports Design Based Metrology to bridge the gap between design layout and SEM image. In this paper we present SEM simulations capabilities, which take into consideration all parts of the SEM physical and electronic path, interaction between Electron beam and material, multi perspective SEM imaging and shadowing derived from proximity effects caused by the interaction of the Secondary Electrons signal with neighboring pattern edges. Optimizing trade-off between simulation accuracy, calibration procedures and computational complexity, the simulation is running in real-time with minimum impact on throughput. Experiment results demonstrate Height measurement capacities, and CAD based simulated pattern is compared with SEM image to evaluate simulated pattern fidelity.

Paper Details

Date Published: 2 April 2014
PDF: 10 pages
Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90510B (2 April 2014); doi: 10.1117/12.2049337
Show Author Affiliations
Shimon Levi, Applied Materials, Inc. (Israel)
Ishai Schwartsband, Applied Materials, Inc. (Israel)
Sergey Khristo, Applied Materials, Inc. (Israel)
Yan Ivanchenko, Applied Materials, Inc. (Israel)
Ofer Adan, Applied Materials, Inc. (Israel)


Published in SPIE Proceedings Vol. 9051:
Advances in Patterning Materials and Processes XXXI
Thomas I. Wallow; Christoph K. Hohle, Editor(s)

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