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Proceedings Paper

Measuring the electrical properties of semiconductor nanowires using terahertz conductivity spectroscopy
Author(s): Hannah J. Joyce; Callum J. Docherty; Chaw-Keong Yong; Jennifer Wong-Leung; Qiang Gao; Suriati Paiman; H. Hoe Tan; C. Jagadish; James Lloyd-Hughes; Laura M. Herz; Michael B. Johnston
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Paper Abstract

Accurately measuring the electronic properties of nanowires is a crucial step in the development of novel semiconductor nanowire-based devices. With this in mind, optical pump–terahertz probe (OPTP) spectroscopy is ideally suited to studies of nanowires: it provides non-contact measurement of carrier transport and dynamics at room temperature. OPTP spectroscopy has been used to assess key electrical properties, including carrier lifetime and carrier mobility, of GaAs, InAs and InP nanowires. The measurements revealed that InAs nanowires exhibited the highest mobilities and InP nanowires exhibited the lowest surface recombination velocity.

Paper Details

Date Published: 7 December 2013
PDF: 6 pages
Proc. SPIE 8923, Micro/Nano Materials, Devices, and Systems, 892321 (7 December 2013); doi: 10.1117/12.2049016
Show Author Affiliations
Hannah J. Joyce, Univ. of Oxford (United Kingdom)
Univ. of Cambridge (United Kingdom)
Callum J. Docherty, Univ. of Oxford (United Kingdom)
Chaw-Keong Yong, Univ. of Oxford (United Kingdom)
Jennifer Wong-Leung, The Australian National Univ. (Australia)
Qiang Gao, The Australian National Univ. (Australia)
Suriati Paiman, The Australian National Univ. (Australia)
H. Hoe Tan, The Australian National Univ. (Australia)
C. Jagadish, The Australian National Univ. (Australia)
James Lloyd-Hughes, Univ. of Warwick (United Kingdom)
Laura M. Herz, Univ. of Oxford (United Kingdom)
Michael B. Johnston, Univ. of Oxford (United Kingdom)

Published in SPIE Proceedings Vol. 8923:
Micro/Nano Materials, Devices, and Systems
James Friend; H. Hoe Tan, Editor(s)

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