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Proceedings Paper

Large-radius neutral beam enhanced chemical vapor deposition process for non-porous ultra-low-k SiOCH
Author(s): Yoshiyuki Kikuchi; Yasuaki Sakakibara; Seiji Samukawa
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Paper Abstract

Pores in ultra-low-k carbon-doped silicon oxide (SiOCH) film have been a serious problem because they produce fragile film strength, with the film incurring damage from integration and diffusion of Cu atoms in thermal annealing. To address this problem, we developed a practical large-radius neutral beam enhanced CVD process to precisely control the film structure so as to eliminate any pores in the film. We used the process with dimethoxy-tetramethyl-disiloxane (DMOTMDS) as a precursor to form a SiOCH film on an 8-inch Si wafer and obtained a non-porous film having an ultra-low k-value of 2.2 with sufficient modulus (>10 GPa). Analyzing the film structure by experimental and theoretical techniques showed that symmetric polymethylsilaxane (PMS) chains were grown and cross-linked to each other in the film. This particular film did not incur any damage from acid or alkali solution or oxygen plasma. Furthermore, the dense film almost completely resisted Cu diffusion into it during thermal annealing.

Paper Details

Date Published: 28 March 2014
PDF: 8 pages
Proc. SPIE 9054, Advanced Etch Technology for Nanopatterning III, 90540H (28 March 2014); doi: 10.1117/12.2048898
Show Author Affiliations
Yoshiyuki Kikuchi, Tokyo Electron Ltd. (Japan)
Tohoku Univ. (Japan)
Yasuaki Sakakibara, Tokyo Electron Ltd. (Japan)
Seiji Samukawa, Tohoku Univ. (Japan)

Published in SPIE Proceedings Vol. 9054:
Advanced Etch Technology for Nanopatterning III
Gottlieb S. Oehrlein; Qinghuang Lin; Ying Zhang, Editor(s)

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