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Proceedings Paper

Bridging the gap from mask to physical design for multiple patterning lithography
Author(s): Bei Yu; Jhih-Rong Gao; Xiaoqing Xu; David Z. Pan
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Paper Abstract

Due to the delay of EUVL, multiple patterning techniques have been used to extend the 193nm lithography to 22nm/14nm nodes, and possibly further. There are many studies on MPL layout decompositions at the mask synthesis stage to resolve the coloring conflicts, minimize the stitches, balance the mask density, or even mitigate the undesirable overlay effects. Meanwhile, there are studies showing that it is very important to consider the multiple patterning implications at earlier physical design stages so that the overall design and manufacturing closure can be reached. In this paper, we will show some recent results and propose a unified physical design methodology for standard cell compliance, pin access, routing, and placement to bridge the gap from mask/layout decomposition to physical design, while accommodating various requirements from double/triple patterning lithography in certain "correct by construction" manner.

Paper Details

Date Published: 28 March 2014
PDF: 11 pages
Proc. SPIE 9053, Design-Process-Technology Co-optimization for Manufacturability VIII, 905308 (28 March 2014); doi: 10.1117/12.2048626
Show Author Affiliations
Bei Yu, Univ. of Texas at Austin (United States)
Jhih-Rong Gao, Univ. of Texas at Austin (United States)
Xiaoqing Xu, Univ. of Texas at Austin (United States)
David Z. Pan, Univ. of Texas at Austin (United States)

Published in SPIE Proceedings Vol. 9053:
Design-Process-Technology Co-optimization for Manufacturability VIII
John L. Sturtevant; Luigi Capodieci, Editor(s)

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