Proceedings Paper
New integrated Monte Carlo code for the simulation of high-resolution scanning electron microscopy images for metrology in microlithography| Format | Member Price | Non-Member Price |
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Paper Abstract
A new Monte Carlo code is presented that includes among others definition of arbitrary geometries with sub-nanometer resolution, high performance parallel computing capabilities, trapped charge, electric field calculation, electron tracking in electrostatic field, and calculation of 3D dose distributions. These functionalities are efficiently implemented thanks to the coupling of the Monte Carlo simulator with a TCAD environment. Applications shown are the synthesis of SEM linescans and images that focus on the evaluation of the impact of proximity effects and self charging on the quantitative extraction of critical dimensions in dense photoresist structures.
Paper Details
Date Published: 2 April 2014
PDF: 12 pages
Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90500I (2 April 2014); doi: 10.1117/12.2048306
Published in SPIE Proceedings Vol. 9050:
Metrology, Inspection, and Process Control for Microlithography XXVIII
Jason P. Cain; Martha I. Sanchez, Editor(s)
PDF: 12 pages
Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90500I (2 April 2014); doi: 10.1117/12.2048306
Show Author Affiliations
Emre Ilgüsatiroglu, ETH Zürich (Switzerland)
Alexey Yu. Illarionov, ETH Zürich (Switzerland)
Mauro Ciappa, ETH Zürich (Switzerland)
Alexey Yu. Illarionov, ETH Zürich (Switzerland)
Mauro Ciappa, ETH Zürich (Switzerland)
Paul Pfäffli, Synopsys Switzerland, LLC (Switzerland)
Lars Bomholt, Synopsys Switzerland, LLC (Switzerland)
Lars Bomholt, Synopsys Switzerland, LLC (Switzerland)
Published in SPIE Proceedings Vol. 9050:
Metrology, Inspection, and Process Control for Microlithography XXVIII
Jason P. Cain; Martha I. Sanchez, Editor(s)
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