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Proceedings Paper

Comparative analysis of shot noise in EUV and e-beam lithography
Author(s): Suchit Bhattarai; Weilun Chao; Andrew R. Neureuther; Patrick P. Naulleau
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Paper Abstract

Gray-scale e-beam lithography has been performed to match the EUV and e-beam aerial image log slope for studying shot noise fundamentals in the two mechanisms through line-edge roughness (LER) measurements for 50 nm lines and spaces patterned on a leading chemically amplified EUV resist. The measured e-beam exposure latitude decreased from 0.4 with binary patterning to 0.28 with gray-scale e-beam exposure designed to match the EUV incident image profile, closely matching the EUV exposure latitude of 0.26. Calculations of absorption statistics with EUV and e-beam suggest that the shot noise with e-beam patterning is expected to be 10% larger than the shot noise with EUV patterning. However, despite the matched image gradients and close to identical absorbed quanta predictions, the e-beam patterned LER is 2.5× larger than the EUV patterned LER.

Paper Details

Date Published: 17 April 2014
PDF: 11 pages
Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90481H (17 April 2014); doi: 10.1117/12.2048248
Show Author Affiliations
Suchit Bhattarai, Univ. of California, Berkeley (United States)
Lawrence Berkeley National Lab. (United States)
Weilun Chao, Lawrence Berkeley National Lab. (United States)
Andrew R. Neureuther, Univ. of California, Berkeley (United States)
Lawrence Berkeley National Lab. (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)

Published in SPIE Proceedings Vol. 9048:
Extreme Ultraviolet (EUV) Lithography V
Obert R. Wood II; Eric M. Panning, Editor(s)

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