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Laser produced plasma light source development for HVM
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Paper Abstract

This paper describes the development of a laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source for advanced lithography applications in high volume manufacturing. EUV lithography is expected to succeed 193nm immersion double patterning technology for sub- 20nm critical layer patterning. In this paper we discuss the most recent results from high power testing on our development systems targeted at the 250W configuration, and describe the requirements and technical challenges related to successful implementation of these technologies. Subsystem performance will be shown including Conversion Efficiency (CE), dose control, collector protection and out-of-band (OOB) radiation measurements. This presentation reviews the experimental results obtained on systems with a focus on the topics most critical for a 250W HVM LPP source.

Paper Details

Date Published: 17 April 2014
PDF: 6 pages
Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 904835 (17 April 2014); doi: 10.1117/12.2048195
Show Author Affiliations
Igor V. Fomenkov, Cymer LLC (United States)
David C. Brandt, Cymer LLC (United States)
Nigel R. Farrar, Cymer LLC (United States)
Bruno La Fontaine, Cymer LLC (United States)
David W. Myers, Cymer LLC (United States)
Daniel J. Brown, Cymer LLC (United States)
Alex I. Ershov, Cymer LLC (United States)
Norbert R. Böwering, Cymer LLC (United States)
Daniel J. Riggs, Cymer LLC (United States)
Robert J. Rafac, Cymer LLC (United States)
Silvia De Dea, Cymer LLC (United States)
Michael Purvis, Cymer LLC (United States)
Rudy Peeters, ASML Netherlands B.V. (Netherlands)
Hans Meiling, ASML Netherlands B.V. (Netherlands)
Noreen Harned, ASML Netherlands B.V. (Netherlands)
Daniel Smith, ASML Netherlands B.V. (Netherlands)
Robert Kazinczi, ASML Netherlands B.V. (Netherlands)
Alberto Pirati, ASML Netherlands B.V. (Netherlands)

Published in SPIE Proceedings Vol. 9048:
Extreme Ultraviolet (EUV) Lithography V
Obert R. Wood II; Eric M. Panning, Editor(s)

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