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Proceedings Paper

Resist toploss modeling for OPC applications
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Paper Abstract

As Critical Dimension (CD) sizes decrease for 32 nm node and beyond, resist loss increases and resist patterns become more vulnerable to etching failures. Traditional OPC models only consider 2D contours and neglect height variations. Rigorous resist simulators can simulate a 3D resist profile but they are not fast enough for correction or verification on a full chip. However, resist loss for positive tone resists is mainly driven by optical intensity variations which are accurately modeled by the optical portion of an OPC model. In this article, we show that a CalibreTM CM1 resist model can be used to determine resist loss by properly selecting the optical image plane for calibration. The model can then be used to identify toploss hotspots on a full chip and in some cases to correction of these patterns. In addition, the article will show how the model can be made more accurate by accounting for some 3D effects like diffusion through height.

Paper Details

Date Published: 31 March 2014
PDF: 10 pages
Proc. SPIE 9052, Optical Microlithography XXVII, 905227 (31 March 2014); doi: 10.1117/12.2048124
Show Author Affiliations
Christian Zuniga, Mentor Graphics Corp. (United States)
Yunfei Deng, Mentor Graphics Corp. (United States)

Published in SPIE Proceedings Vol. 9052:
Optical Microlithography XXVII
Kafai Lai; Andreas Erdmann, Editor(s)

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