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Proceedings Paper

Direct measurement of carbon contamination topography on patterned EUV masks
Author(s): Yu-Jen Fan; Thomas Murray; Frank Goodwin; Dominic Ashworth; Gregory Denbeaux
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Paper Abstract

In our previous work, various techniques were used to confirm the contamination deposits on the sidewall of extreme ultraviolet (EUV) mask absorbers [1-2]. In order to further understand the effects of contamination topography on mask absorbing features, direct measurements of contaminated features is needed. In this work, we investigated the contamination topography using cross-section transmission electron microscope (TEM) image analysis on four different masks. TEM specimens of contaminated features from silicon and ruthenium capped EUV masks were prepared using a focused ion beam (FIB). We conducted the contamination experiment with three different exposure sources including EUV, out-of-band, and electron induced processes. Thickness measurements from each contamination experiment were provided. Shadowing effect and geometric analysis on the contamination topography is also discussed.

Paper Details

Date Published: 17 April 2014
PDF: 8 pages
Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90480O (17 April 2014); doi: 10.1117/12.2048092
Show Author Affiliations
Yu-Jen Fan, SEMATECH Inc. (United States)
Thomas Murray, SUNY College of Nanoscale Science and Engineering (United States)
Frank Goodwin, SEMATECH Inc. (United States)
Dominic Ashworth, SEMATECH Inc. (United States)
Gregory Denbeaux, SUNY College of Nanoscale Science and Engineering (United States)

Published in SPIE Proceedings Vol. 9048:
Extreme Ultraviolet (EUV) Lithography V
Obert R. Wood II; Eric M. Panning, Editor(s)

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