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Proceedings Paper

Observation of optically induced transparency effect in silicon nanophotonic wires with graphene
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Paper Abstract

Graphene, a well-known two-dimensional sheet of carbon atoms in a honeycomb structure, has many unique and fascinating properties in optoelectronics and photonics. Integration of graphene on silicon nanophotonic wires is a promising approach to enhance light-graphene interactions. In this paper, we demonstrate on-chip silicon nanophotonic wires covered by graphene with CMOS-compatible fabrication processes. Under the illumination of pump light on the graphene sheet, a loss reduction of silicon nanophotonic wires, which is called optically induced transparency (OIT) effect, is observed over a broad wavelength range for the first time. The pump power required to generate the OIT effect is as low as ~0.1mW and the corresponding power density is about 2×103mW/cm2, which is significantly different from the saturated absorption effect of graphene reported previously. The extremely low power density implies a new mechanism for the present OIT effect, which will be beneficial to realize silicon on-chip all-optical controlling in the future. It also suggests a new and efficient approach to tune the carrier concentration (doping level) in graphene optically.

Paper Details

Date Published: 8 March 2014
PDF: 8 pages
Proc. SPIE 8989, Smart Photonic and Optoelectronic Integrated Circuits XVI, 89890C (8 March 2014); doi: 10.1117/12.2047618
Show Author Affiliations
Longhai Yu, Zhejiang Univ. (China)
Jiajiu Zheng, Zhejiang Univ. (China)
Daoxin Dai, Zhejiang Univ. (China)
Sailing He, Zhejiang Univ. (China)
KTH Royal Institute of Technology (Sweden)

Published in SPIE Proceedings Vol. 8989:
Smart Photonic and Optoelectronic Integrated Circuits XVI
Louay A. Eldada; El-Hang Lee; Sailing He, Editor(s)

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