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Proceedings Paper

Novel three dimensional (3D) CD-SEM profile measurements
Author(s): Wataru Ito; Benjamin Bunday; Sumito Harada; Aaron Cordes; Tsutomu Murakawa; Abraham Arceo; Makoto Yoshikawa; Toshihiko Hara; Takehito Arai; Soichi Shida; Masayuki Yamagata; Jun Matsumoto; Takayuki Nakamura
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Paper Abstract

A new SEM technology is becoming available that allows image-based 3D profile metrology of nanoscale features. Using patented multi-channel detector technology, this system can acquire information of surface concave and convex features, and sidewall angle (SWA) and height of profiles, quickly and non-destructively for nanoscale structures such as fin field-effect transistors (FinFETs), using electron beam technology with its well-known long probe lifetime, stability and small probe size. Here we evaluate this new technology and demonstrate its applicability to contemporary advanced structures such as FinFETs, including not only CD, but also profile, SWA, top corner rounding (TCR) and bottom corner rounding (BCR).

Paper Details

Date Published: 2 April 2014
PDF: 9 pages
Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 90500D (2 April 2014); doi: 10.1117/12.2047374
Show Author Affiliations
Wataru Ito, Advantest Corp. (Japan)
Benjamin Bunday, SEMATECH Inc. (United States)
Sumito Harada, Advantest Corp. (Japan)
Aaron Cordes, SEMATECH Inc. (United States)
Tsutomu Murakawa, Advantest Corp. (Japan)
Abraham Arceo, SEMATECH Inc. (United States)
Makoto Yoshikawa, Advantest Corp. (Japan)
Toshihiko Hara, Advantest Corp. (Japan)
Takehito Arai, Advantest Corp. (Japan)
Soichi Shida, Advantest Corp. (Japan)
Masayuki Yamagata, Advantest Corp. (Japan)
Jun Matsumoto, Advantest Corp. (Japan)
Takayuki Nakamura, Advantest Corp. (Japan)

Published in SPIE Proceedings Vol. 9050:
Metrology, Inspection, and Process Control for Microlithography XXVIII
Jason P. Cain; Martha I. Sanchez, Editor(s)

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