Proceedings Paper
Extremely high current density over 1000 A/cm2 operation in M-GaN LEDs on bulk GaN substrates with low-efficiency droop| Format | Member Price | Non-Member Price |
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Paper Abstract
A high current density over 1000 A/cm2 operation in small chip size m-plane GaN-LED has been successfully
demonstrated. The LED with chip size 450 × 450 μm2 has emitted 1353 mW in light output power and 39.2% in external
quantum efficiency (EQE) at 1000 A/cm2 (1134 mA). The m-plane GaN-LED has showed asymmetric radiation
characteristics. The radiation patterns are controlled by the surface of LED package, the height of LED chip, and striped
texture on top m-plane surface.
Paper Details
Date Published: 27 February 2014
PDF: 8 pages
Proc. SPIE 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, 900316 (27 February 2014); doi: 10.1117/12.2047235
Published in SPIE Proceedings Vol. 9003:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Martin Strassburg, Editor(s)
PDF: 8 pages
Proc. SPIE 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, 900316 (27 February 2014); doi: 10.1117/12.2047235
Show Author Affiliations
Toshiya Yokogawa, Panasonic Corp. (Japan)
Akira Inoue, Panasonic Corp. (Japan)
Published in SPIE Proceedings Vol. 9003:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Martin Strassburg, Editor(s)
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