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Proceedings Paper

High performance InP-based InAs triangular quantum well lasers operating beyond 2 μm
Author(s): Y. Gu; Y. G. Zhang; Y. Y. Cao; X. Y. Chen; Hsby. Li; L. Zhou
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Paper Abstract

InP-based antimony-free In0.53Ga0.47As/InAs/In0.53Ga0.47As strained triangular quantum well lasers have been demonstrated for the light sources with wavelength beyond 2 μm. Theoretical estimation shows that the triangular quantum well owns the longer emission wavelength than the rectangular quantum well with the same strain extent. The triangular quantum well was formed experimentally by using gas source molecular beam epitaxy grown digital alloy, and the growth temperature of the triangular quantum wells was optimized. The triangular quantum well lasers with emission beyond 2.2 μm under continuous-wave operation at temperatures higher than 330 K have been demonstrated. The performances of the triangular quantum well lasers are improved comparing to those of InAs rectangular quantum lasers with the nearly same lasing wavelength.

Paper Details

Date Published: 27 February 2014
PDF: 7 pages
Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 90021E (27 February 2014); doi: 10.1117/12.2043222
Show Author Affiliations
Y. Gu, Shanghai Institute of Microsystem and Information Technology (China)
Y. G. Zhang, Shanghai Institute of Microsystem and Information Technology (China)
Y. Y. Cao, Shanghai Institute of Microsystem and Information Technology (China)
X. Y. Chen, Shanghai Institute of Microsystem and Information Technology (China)
Hsby. Li, Shanghai Institute of Microsystem and Information Technology (China)
L. Zhou, Shanghai Institute of Microsystem and Information Technology (China)


Published in SPIE Proceedings Vol. 9002:
Novel In-Plane Semiconductor Lasers XIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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