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Proceedings Paper

The novel dual-waveband SWIR InGaAs FPAs with monolithic integration filter microstructure
Author(s): Heng-jing Tang; Xue Li; Yunji Wang; Weibo Duan; Xiumei Shao; Hai-mei Gong
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Paper Abstract

According to excellent photoelectric properties of InGaAs epitaxial material, and important application of the spectral bands at center wavelength of 1.38 μm and 1.60μm, the new-type monolithic dual-band InGaAs detector is studied in this paper. The detector was designed and fabricated with mesa structure and Fabry-Perot cavity by thermal evaporation. The current-voltage characteristics, response spectra of monolithic detector were measured. The bandwidths of 1.38 μm and 1.60μm waveband detector are 46nm and 54 nm respectively. A 400×2 dual-waveband monolithic detector was wire-bonded with two 400×1 readout circuits, to form 400×2 dual-waveband InGaAs focal plane arrays (FPAs). At room temperature, the detectivity D*, non-uniformity, response bandwidth and the non-operative pixel ratio of 1.38 μm waveband FPAs are 7.71×1011cmHz1/2/W, 6.20%, 46nm and 0.25%, respectively, and the ones of 1.60 μm waveband FPAs are 6.06×1011cmHz1/2/W, 3.20%, 54nm and 0.25%, respectively. The monolithic dual-waveband InGaAs focal plane arrays (FPAs) plays an important roles in developing compact, low-cost and high-precision photoelectric detection (imaging) system.

Paper Details

Date Published: 7 March 2014
PDF: 6 pages
Proc. SPIE 8982, Optical Components and Materials XI, 898229 (7 March 2014); doi: 10.1117/12.2042837
Show Author Affiliations
Heng-jing Tang, Shanghai Institute of Technical Physics (China)
Xue Li, Shanghai Institute of Technical Physics (China)
Yunji Wang, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Weibo Duan, Shanghai Institute of Technical Physics (China)
Xiumei Shao, Shanghai Institute of Technical Physics (China)
Hai-mei Gong, Shanghai Institute of Technical Physics (China)

Published in SPIE Proceedings Vol. 8982:
Optical Components and Materials XI
Michel J. F. Digonnet; Shibin Jiang, Editor(s)

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