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Proceedings Paper

Electrical properties of ultrathin Ga-doped ZnO films on Si and ZnO
Author(s): D. C. Look; B. Wang; K. D. Leedy; D. B. Thomson
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Paper Abstract

Ga-doped ZnO films of thicknesses 3 – 500 nm were grown on either Si or ZnO at 200 °C by pulsedlaser deposition in 10 mTorr of Ar. Sheet carrier concentration ns and mobility μ were measured at room temperature by the Hall effect and were fitted, respectively, to the equations ns(d) = n(∞)(d - δd) and μ(d) = μ(∞)/[1 + d*/(d - δd)], where n is the volume carrier concentration at d = ∞ (the bulk value), δd is the thickness of the dead layer, μ(∞) is the mobility at d = ∞, and d* is a figure of merit for the electrical properties of the interface. Roughly, d* may be thought of as the minimum layer thickness that will produce good conductance. For GZO/Si, the fitted d* = 23 nm, and for GZO/ZnO, 3 nm. As evidence of the usefulness of d*, a 3-nm layer of GZO/Si showed no measurable conductance (since d << d*), whereas a 5-nm layer of GZO had excellent conductance (since d ≈ d*). In fact, the latter had a resistivity of about 4 × 10-4 Ω-cm at room temperature, possibly the lowest value ever reported in ZnO at this thickness.

Paper Details

Date Published: 8 March 2014
PDF: 7 pages
Proc. SPIE 8987, Oxide-based Materials and Devices V, 898702 (8 March 2014); doi: 10.1117/12.2042567
Show Author Affiliations
D. C. Look, Wright State Univ. (United States)
Wyle Labs., Inc. (United States)
Air Force Research Lab. (United States)
B. Wang, Wright State Univ. (United States)
K. D. Leedy, Air Force Research Lab. (United States)
D. B. Thomson, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 8987:
Oxide-based Materials and Devices V
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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