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Proceedings Paper

Proposal for realizing high-efficiency III-nitride semiconductor tandem solar cells with InN/GaN superstructure magic alloys fabricated at raised temperature (SMART)
Author(s): Kazuhide Kusakabe; Akihiko Yoshikawa
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Paper Abstract

We propose a plausible and realistic idea for realizing high-efficiency III-nitride semiconductor tandem solar cells which utilize nearly entire AM-1.5 solar spectrum conversion under a subcell photocurrent matching rule. For the sake of drastic improvement/suppression of pn-junction leakage current, each subcell in the proposed tandem solar cells is composed of superstructure InN/GaN magic alloys, i.e. coherently grown (InN)m/(GaN)n short-period superlattices with simple integer pairs of (m, n) ≤ 4 in monolayers, which solve lattice-mismatch and immiscible problems in a conventional InGaN ternary alloy system. The InN/GaN magic alloys are further applicable to band engineering that provides potential wells for a thermal/photo sensitization effect and graded-bandgap structures for efficient carrier collection under the same (m, n) ratio alloys or keeping the coherent structure. Theoretical maximum conversion efficiency is 51% (58% under 250-suns concentration) for a 4-tandem cell configuration.

Paper Details

Date Published: 8 March 2014
PDF: 10 pages
Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89861B (8 March 2014); doi: 10.1117/12.2042121
Show Author Affiliations
Kazuhide Kusakabe, Chiba Univ. (Japan)
Akihiko Yoshikawa, Chiba Univ. (Japan)
Kogakuin Univ. (Japan)

Published in SPIE Proceedings Vol. 8986:
Gallium Nitride Materials and Devices IX
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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