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Proceedings Paper

Heterogeneously integrated lasers on silicon
Author(s): Brian R. Koch; Erik J. Norberg; Jonathan E. Roth; Byungchae Kim; Anand Ramaswamy; Robert S. Guzzon; John Hutchinson; Jae-Hyuk Shin; Jeffrey Imamura; Brandon Gomez; Gregory Fish; Alexander Fang
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Paper Abstract

Aurrion’s heterogeneous integration process enables high performance active components such as lasers, modulators, and photodetectors to be elegantly integrated on a silicon photonics platform with high performance passive components. This platform also offers the unique capability to combine different types of active devices with separately optimized materials on the same wafer, die, and photonic integrated circuit. Similarly, devices and photonic integrated circuits operating in different wavelength bands can be formed within the same wafer and die. Experimental demonstrations show that these active components can achieve performance on par with commercially available discrete III-V components. In this paper we will discuss the advantages of Aurrion’s heterogeneous integration platform and discuss prototype demonstrations.

Paper Details

Date Published: 27 February 2014
PDF: 8 pages
Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 90020U (27 February 2014); doi: 10.1117/12.2042023
Show Author Affiliations
Brian R. Koch, Aurrion, Inc. (United States)
Erik J. Norberg, Aurrion, Inc. (United States)
Jonathan E. Roth, Aurrion, Inc. (United States)
Byungchae Kim, Aurrion, Inc. (United States)
Anand Ramaswamy, Aurrion, Inc. (United States)
Robert S. Guzzon, Aurrion, Inc. (United States)
John Hutchinson, Aurrion, Inc. (United States)
Jae-Hyuk Shin, Aurrion, Inc. (United States)
Jeffrey Imamura, Aurrion, Inc. (United States)
Brandon Gomez, Aurrion, Inc. (United States)
Gregory Fish, Aurrion, Inc. (United States)
Alexander Fang, Aurrion, Inc. (United States)


Published in SPIE Proceedings Vol. 9002:
Novel In-Plane Semiconductor Lasers XIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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