We report GaSb-based broad-area (BA) lasers, ridge-waveguide (RWG) lasers and laterally coupled distributedfeedback (LC-DFB) lasers grown metamorphically on GaAs substrates. Despite the large lattice mismatch, a high crystal quality laser structure was achieved. All lasers operate continuous-wave at room temperature with emission wavelengths near 2-μm. BA lasers emit total output power up to 70 mW at 15°C with low internal loss and low thermal resistance compared to those of pseudomorphic lasers. Single lateral mode RWG lasers demonstrate stable output power over a 1000-hour test and operate continuous-wave up to 70°C. LC-DFB lasers emit total output power of up to 49 mW in a single longitudinal mode and side-mode suppression ratio of 25 dB at a heat-sink temperature of 15°C.

Date Published: 27 February 2014
PDF: 6 pages
Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 900216 (27 February 2014); doi: 10.1117/12.2042004

Published in SPIE Proceedings Vol. 9002:
Novel In-Plane Semiconductor Lasers XIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)