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Proceedings Paper

Use of single-event upsets in dynamic random access memories as the basis for a neutron detector
Author(s): Dimitra G. Darambara; Nicholas M. Spyrou
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Paper Abstract

Single event upsets (SEUs) can deposit sufficient electrical charge on integrated circuit nodes to initiate logic state reversal without causing any permanent changes in the device. A hardware system employing dynamic random access memories (dRAMs) is being designed and constructed with a view to using it in neutron detection. Having initially proved that dRAMs can be used as heavy charged particle detectors, it was thought that these devices can be made sensitive to neutrons by adding a foil to convert the thermal neutrons to charged particles by making use of the (n,(alpha) ) reaction. A model has been developed to examine the use of possible converters with respect to soft error (SE) generation including those factors that determine the optimum thickness and the efficiency of such a detector.

Paper Details

Date Published: 3 March 1995
PDF: 5 pages
Proc. SPIE 2339, International Conference on Neutrons and Their Applications, (3 March 1995); doi: 10.1117/12.204167
Show Author Affiliations
Dimitra G. Darambara, Univ. of Surrey (United Kingdom)
Nicholas M. Spyrou, Univ. of Surrey (United Kingdom)

Published in SPIE Proceedings Vol. 2339:
International Conference on Neutrons and Their Applications
George Vourvopoulos; Themis Paradellis, Editor(s)

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