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Proceedings Paper

Influence of nanoscale indium fluctuation in the InGaN quantum-well LED to the efficiency droop with a fully 3D simulation model
Author(s): Tsung-Jui Yang; James S. Speck; Yuh-Renn Wu
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Paper Abstract

In this paper, we discussed the influence of the indium fluctuation to the efficiency droop in LEDs. Both the real and randomly generated indium fluctuation are used in the 3D simulation and compared to the uniform indium distribution quantum wells. We found that the electrical and optical properties in LEDs such as the carrier transport, radiative and Auger recombination, and the droop effect, are strongly affected by these nanoscale indium fluctuations.

Paper Details

Date Published: 8 March 2014
PDF: 8 pages
Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89861I (8 March 2014); doi: 10.1117/12.2039374
Show Author Affiliations
Tsung-Jui Yang, National Taiwan Univ. (Taiwan)
James S. Speck, Univ. of California, Santa Barbara (United States)
Yuh-Renn Wu, National Taiwan Univ. (Taiwan)

Published in SPIE Proceedings Vol. 8986:
Gallium Nitride Materials and Devices IX
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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