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Proceedings Paper

Radiative and nonradiative decay of excitons in GaN nanowires
Author(s): Christian Hauswald; Timur Flissikowski; Holger T. Grahn; Lutz Geelhaar; Henning Riechert; Oliver Brandt
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Paper Abstract

GaN nanowires form spontaneously on a wide variety of substrates without suffering from extended defects. However, their quasi-one-dimensional nature causes these structures to have an extended free surface, resulting in a surface-to-volume ratio orders of magnitude larger than that of a planar layer. Additionally, the high nucleation density of spontaneously formed GaN nanowire ensembles results in an unintentional, but inevitable coalescence between individual nanowires. In this work, we investigate the impact of both the surface and the coalescence of nanowires on the recombination dynamics of excitons in GaN nanowire ensembles. Using simple models to simulate the change in recombination dynamics of bound excitons in GaN NWs with varying diameter and coalescence degree, we show that the comparatively short decay times at low temperatures are not generally caused by either of these mechanisms. Furthermore, we demonstrate that the biexponential decay for the donor-bound exciton is also not related to a coexistence of nonradiative and radiative recombination channels, but originates from a coupling of the donor- and acceptor-bound exciton states in the GaN NWs.

Paper Details

Date Published: 8 March 2014
PDF: 11 pages
Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89860V (8 March 2014); doi: 10.1117/12.2039082
Show Author Affiliations
Christian Hauswald, Paul-Drude-Institut für Festkörperelektronik (Germany)
Timur Flissikowski, Paul-Drude-Institut für Festkörperelektronik (Germany)
Holger T. Grahn, Paul-Drude-Institut für Festkörperelektronik (Germany)
Lutz Geelhaar, Paul-Drude-Institut für Festkörperelektronik (Germany)
Henning Riechert, Paul-Drude-Institut für Festkörperelektronik (Germany)
Oliver Brandt, Paul-Drude-Institut für Festkörperelektronik (Germany)

Published in SPIE Proceedings Vol. 8986:
Gallium Nitride Materials and Devices IX
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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