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Proceedings Paper

Optical properties of InGaN/GaN MQW LEDs grown on Si (111) substrates with low threading dislocation densities
Author(s): Shigeya Kimura; Jumpei Tajima; Hajime Nago; Toshiki Hikosaka; Hisashi Yoshida; Kenjiro Uesugi; Shinya Nunoue
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Paper Abstract

We have grown blue light-emitting diodes (LEDs) with low threading dislocation densities (TDDs) by using SiN interlayers on Si (111) substrates. Our growth technique using SiN layers makes it possible to decrease twist components (edge-type threading dislocation components). The edge-type TDDs are almost the same values as those of LEDs grown on Al2O3 (0001) substrates. EQE of LEDs grown on Si (111) substrates increases with decreasing edge-type dislocation in the low-current-density region, and the EQE of the sample with low TDD is almost as high as that of the LED grown on an Al2O3 (0001) substrate at room temperature. It is found that the hot/cold factors (HCFs) of LEDs grown on Si (111) substrates increase with decreasing edge-type dislocations in the low-current-density region, but are less than those of an LED grown on an Al2O3 (0001) substrate. Time-resolved photoluminescence (TRPL) shows that the dominant origin of the thermal quenching is edge-type dislocations in our samples, but other defects such as screw-type dislocations also contribute to it. We also found the fluctuated emission patterns consisting of bright and dark areas originated from the difference of Shockley–Read–Hall (SRH) type defect densities in the multi-quantum wells (MQWs) grown on Si (111) substrates. The bright areas spread, and the configurations of the bright areas change into ring-like patterns with reducing edge-type TDDs. We suggest that the internal quantum efficiency (IQE) of dark areas should be promoted to improve the performance of the MQWs grown on Si (111) substrates.

Paper Details

Date Published: 8 March 2014
PDF: 8 pages
Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89861H (8 March 2014); doi: 10.1117/12.2038714
Show Author Affiliations
Shigeya Kimura, Toshiba Corp. (Japan)
Jumpei Tajima, Toshiba Corp. (Japan)
Hajime Nago, Toshiba Corp. (Japan)
Toshiki Hikosaka, Toshiba Corp. (Japan)
Hisashi Yoshida, Toshiba Corp. (Japan)
Kenjiro Uesugi, Toshiba Corp. (Japan)
Shinya Nunoue, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 8986:
Gallium Nitride Materials and Devices IX
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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