A 30 Gb/s Ge waveguide photodetector was demonstrated and its reliability under elevated temperatures and high stress biases were investigated. For different reverse biases, the slopes of the dark current increment versus stress bias time curves were initiatively found to be the same and made the lifetime extrapolation feasible. The lifetime of the Ge waveguide photodetector under different stress bias was predicted by using a simple extrapolation method. To maintain the ten-year lifetime of the Ge waveguide photodetector, the bias voltage should be kept lower than -3V. For the first time, the degradation mechanism under stress biases was analyzed in detail by the reaction-diffusion model. The experimental results agree well to the theoretical derivation based on reaction-diffusion model.

Date Published: 7 March 2014
PDF: 7 pages
Proc. SPIE 8982, Optical Components and Materials XI, 89820W (7 March 2014); doi: 10.1117/12.2038324

Published in SPIE Proceedings Vol. 8982:
Optical Components and Materials XI
Michel J. F. Digonnet; Shibin Jiang, Editor(s)