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Proceedings Paper

High-power pseudomorphic mid-ultraviolet light-emitting diodes with improved efficiency and lifetime
Author(s): Craig G. Moe; James R. Grandusky; Jianfeng Chen; Ken Kitamura; Mark C. Mendrick; Muhammad Jamil; Masato Toita; Shawn R. Gibb; Leo J. Schowalter
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Paper Abstract

Recent advances in mid-ultraviolet light-emitting diodes grown pseudomorphically on bulk AlN substrates have led to improved efficiencies and lifetimes. For a 266 nm device an output power of 66 mW at 300 mA has been achieved with an external quantum efficiency of 4.5%. More importantly, the lifetimes of these devices have been increased substantially. Testing of LEDs in both surface mount design (SMD) and TO-39 packages show L50 lifetimes well in excess of 1,000 hours under a variety of case temperatures and currents. Package-related catastrophic failures are eliminated through encapsulation and hermetic sealing, further reducing failure rates and extending the lifetime.

Paper Details

Date Published: 8 March 2014
PDF: 5 pages
Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89861V (8 March 2014); doi: 10.1117/12.2037856
Show Author Affiliations
Craig G. Moe, Crystal IS, Inc. (United States)
James R. Grandusky, Crystal IS, Inc. (United States)
Jianfeng Chen, Crystal IS, Inc. (United States)
Ken Kitamura, Crystal IS, Inc. (United States)
Mark C. Mendrick, Crystal IS, Inc. (United States)
Muhammad Jamil, Crystal IS, Inc. (United States)
Masato Toita, Crystal IS, Inc. (United States)
Shawn R. Gibb, Crystal IS, Inc. (United States)
Leo J. Schowalter, Crystal IS, Inc. (United States)

Published in SPIE Proceedings Vol. 8986:
Gallium Nitride Materials and Devices IX
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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