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Proceedings Paper

Design and lasing characteristics of GaN vertical elongated cavity surface emitting lasers
Author(s): Masao Kawaguchi; Osamu Imafuji; Kentaro Nagamatsu; Kazuhiko Yamanaka; Shinichi Takigawa; Takuma Katayama
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Paper Abstract

We report on design and lasing characteristics of GaN vertical-cavity surface-emitting lasers (VCSELs) with an elongated cavity for use in uniform elements of a two-dimensional (2D) laser array. Calculations of VCSELs with the elongated cavity taking into account the wavelength dispersion of the refractive index show that the transverse mode spacing can be significantly narrower than the gain spectrum with a small tradeoff of the differential quantum efficiency. The result clearly shows that the elongated cavity is robust against the thermally induced peakshift of the gain spectrum, and thus preferable for use in elements of density packed laser array for which uniform operation of each element is crucial. The VCSEL with the elongated cavity fabricated by the wafer thinning technique operates under current injection by using highly reflective distributed Bragg reflectors (DBRs) made of transparent ZrO2 and SiO2 film stacks. Together with high reflectivity and wide stop band of the DBR, the elongated cavity of 6 μm (36λ) allows multimode lasing oscillation with a mode spacing of 2.9 nm, which is one order of magnitude narrower than the gain spectrum. In addition, we demonstrate a 5x5 GaN VCSEL array.

Paper Details

Date Published: 8 March 2014
PDF: 6 pages
Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89861K (8 March 2014); doi: 10.1117/12.2037484
Show Author Affiliations
Masao Kawaguchi, Panasonic Corp. (Japan)
Osamu Imafuji, Panasonic Corp. (Japan)
Kentaro Nagamatsu, Panasonic Corp. (Japan)
Kazuhiko Yamanaka, Panasonic Corp. (Japan)
Shinichi Takigawa, Panasonic Corp. (Japan)
Takuma Katayama, Panasonic Corp. (Japan)

Published in SPIE Proceedings Vol. 8986:
Gallium Nitride Materials and Devices IX
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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