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Proceedings Paper

Multi-wavelength light emission from three-dimensional AlGaN quantum wells fabricated on facet structures
Author(s): Ken Kataoka; Masanori Yamaguchi; Kensuke Fukushima; Mitsuru Funato; Yoichi Kawakami
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Paper Abstract

Faceted three-dimensional (3D) AlGaN/AlN multiple quantum wells (MQWs) with semipolar {1 ̄101} and polar (0001) planes are fabricated by a regrowth technique based on metalorganic vapor phase epitaxy (MOVPE) on trench-patterned AlN templates. Similar 3D microfacet structures with different height are formed on top of and at the bottom of the AlN trench. Cathodoluminescence (CL) spectra are separately acquired at semipolar and (0001) facet QWs at room temperature (RT). The peak energies of {1 ̄101} facet QWs and (0001) facet QWs on higher 3D structures are 5.42 and 5.43 eV, respectively, while that of (0001) facet QWs on lower 3D structures is 5.23eV. Through structural analyses using transmission electron microscopy (TEM), the peak energy difference between the {1 ̄101} QWs and the lower (0001) QWs is ascribed mainly to suppressed internal electric fields in the {1 ̄101} facet QWs. Furthermore, Al spatial distribution causes the peak energy difference between the (0001) facet QWs.

Paper Details

Date Published: 8 March 2014
PDF: 6 pages
Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 898627 (8 March 2014); doi: 10.1117/12.2037286
Show Author Affiliations
Ken Kataoka, Kyoto Univ. (Japan)
Ushio Inc. (Japan)
Masanori Yamaguchi, Ushio Inc. (Japan)
Kensuke Fukushima, Ushio Inc. (Japan)
Mitsuru Funato, Kyoto Univ. (Japan)
Yoichi Kawakami, Kyoto Univ. (Japan)

Published in SPIE Proceedings Vol. 8986:
Gallium Nitride Materials and Devices IX
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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