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Proceedings Paper

Quantum band engineering of nitride semiconductors for infrared lasers
Author(s): O. Malis; C. Edmunds; D. Li; J. Shao; G. Gardner; W. Li; P. Fay; M. J. Manfra
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Paper Abstract

The III-nitride semiconductors have been proposed as candidate materials for new quantum cascade lasers in the nearinfrared (1.5-3 μm), and far-infrared (30-60 μm), due to the large conduction-band offset between GaN and Alcontaining alloys (>1 eV), and the large longitudinal optical (LO) phonon energy (90 meV), respectively. The challenges of III-nitride intersubband devices are twofold: material and design related. Due to large electron effective mass, the nitride intersubband materials require the ability to fine-tune the atomic structure at an unprecedented sub-nanometer level. Moreover, the III-N materials exhibit built-in polarization fields that complicate the design of intersubband lasers. This paper presents recent results on c-plane nitride resonant-tunneling diodes that are important for the prospects of farinfrared nitride lasers. We also report near-infrared absorption and photocurrent measurements in nonpolar (m-plane) AlGaN/GaN superlattices.

Paper Details

Date Published: 27 February 2014
PDF: 8 pages
Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 90021D (27 February 2014); doi: 10.1117/12.2036286
Show Author Affiliations
O. Malis, Purdue Univ. (United States)
C. Edmunds, Purdue Univ. (United States)
D. Li, Purdue Univ. (United States)
J. Shao, Purdue Univ. (United States)
G. Gardner, Purdue Univ. (United States)
W. Li, Univ. of Notre Dame (United States)
P. Fay, Univ. of Notre Dame (United States)
M. J. Manfra, Purdue Univ. (United States)

Published in SPIE Proceedings Vol. 9002:
Novel In-Plane Semiconductor Lasers XIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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