Proceedings Paper
Doping profile recognition in silicon using terahertz time-domain spectroscopy| Format | Member Price | Non-Member Price |
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Paper Abstract
Here we demonstrate for the first time that terahertz time domain spectroscopy (THz-TDS) can be used to distinguish doping profile discrepancies in semiconductor silicon wafers. These proof of concept results suggest the suitability of the technique for in-line process control applications in both IC/photovoltaic (PV) industries. The experimental results show that THz radiation is sensitive to the implant dosage changes in the time domains.
Paper Details
Date Published: 7 March 2014
PDF: 7 pages
Proc. SPIE 8985, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VII, 89850M (7 March 2014); doi: 10.1117/12.2036241
Published in SPIE Proceedings Vol. 8985:
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VII
Laurence P. Sadwick; Créidhe M. O'Sullivan, Editor(s)
PDF: 7 pages
Proc. SPIE 8985, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VII, 89850M (7 March 2014); doi: 10.1117/12.2036241
Show Author Affiliations
Chih-Yu Jen, Rochester Institute of Technology (United States)
Christiaan Richter, Rochester Institute of Technology (United States)
Published in SPIE Proceedings Vol. 8985:
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VII
Laurence P. Sadwick; Créidhe M. O'Sullivan, Editor(s)
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