Proceedings Paper
Influence of material properties on some parameters of n-type InSb IR photoconductive detector| Format | Member Price | Non-Member Price |
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Paper Abstract
This paper refers to the influence of the electrical and transport properties of n-type InSb single crystal on the parameters of the IR (3 - 5 micrometers ) photoconductive (PC)-detector. We consider a simple n-type PC element made of InSb single crystal. Some general physical features of the device, the device performance related to the material properties and the characterization techniques involved are described.
Paper Details
Date Published: 8 March 1995
PDF: 3 pages
Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); doi: 10.1117/12.203605
Published in SPIE Proceedings Vol. 2461:
ROMOPTO '94: Fourth Conference in Optics
Valentin I. Vlad, Editor(s)
PDF: 3 pages
Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); doi: 10.1117/12.203605
Show Author Affiliations
Cristiana E. A. Grigorescu, Institute for Optoelectronics (Romania)
Stefan A. Manea, Institute for Physics and Technology of Materials (Romania)
E. Elena, Institute for Physics and Technology of Materials (Romania)
Stefan A. Manea, Institute for Physics and Technology of Materials (Romania)
E. Elena, Institute for Physics and Technology of Materials (Romania)
T. Botila, Institute for Physics and Technology of Materials (Romania)
Mihail F. Lazarescu, Institute for Physics and Technology of Materials (Romania)
Mihail F. Lazarescu, Institute for Physics and Technology of Materials (Romania)
Published in SPIE Proceedings Vol. 2461:
ROMOPTO '94: Fourth Conference in Optics
Valentin I. Vlad, Editor(s)
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