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Proceedings Paper

Defect temperature kinetics during Catastrophic Optical Damage in high power diode lasers
Author(s): Martin Hempel; Jens W. Tomm
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Paper Abstract

Catastrophic optical damage (COD) is one of the limiting factors preventing diode lasers from reaching even higher optical output powers. We apply different techniques to AlGaAs/GaAs based quantum well diode lasers emitting at 808 nm in order to investigate the temperature kinetics during COD. The latter was subject to controversial discussions in the past. We experimentally verify the presence of temperatures as high as ≈1600°C at the defect front during the entire defect growth process. Locations passed by this front are affected by a rapid heating-cooling-cycle. Our results allow a deeper understanding of the mechanisms related to COD on the microscopic and macroscopic scale.

Paper Details

Date Published: 27 February 2014
PDF: 12 pages
Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 90021H (27 February 2014); doi: 10.1117/12.2035488
Show Author Affiliations
Martin Hempel, Max-Born-Institut (Germany)
Jens W. Tomm, Max-Born-Institut (Germany)

Published in SPIE Proceedings Vol. 9002:
Novel In-Plane Semiconductor Lasers XIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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