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Proceedings Paper

Technology and characterization of 4H-SiC p-i-n junctions
Author(s): Andrzej Kociubiński; Mariusz Duk; Monika Masłyk; Norbert Kwietniewski; Mariusz Sochacki; Michał Borecki; Michael Korwin-Pawłowski
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Paper Abstract

Silicon Carbide (SiC) photodiodes have been proposed in recent years for ultraviolet (UV) light detection because of their robustness even in harsh environments, high quantum efficiency in all the UV range (200nm-400nm), excellent visible and infra-red blindness excluding UV filters implementation, low dark current and high speed. 4H-SiC has a bandgap three times larger (3.26eV) than Si and, thus, SiC detectors should have much higher sensitivity than Si detectors. In this paper, we present an overview of results on 4H-SiC p-i-n junctions fabrication and characterization. We used implantation technique to obtain p-region of the investigated structure. The ohmic contacts were formed using evaporation, etching and lift-off. Current-voltage, contact resistance and electroluminescence are the main characteristics of the presented devices. All the diodes showed excellent rectification with leakage current density of less than 10-9A/cm2.

Paper Details

Date Published: 25 October 2013
PDF: 6 pages
Proc. SPIE 8903, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2013, 89030V (25 October 2013); doi: 10.1117/12.2035436
Show Author Affiliations
Andrzej Kociubiński, Lublin Univ. of Technology (Poland)
Mariusz Duk, Lublin Univ. of Technology (Poland)
Monika Masłyk, Lublin Univ. of Technology (Poland)
Norbert Kwietniewski, Warsaw Univ. of Technology (Poland)
Mariusz Sochacki, Warsaw Univ. of Technology (Poland)
Michał Borecki, Warsaw Univ. of Technology (Poland)
Michael Korwin-Pawłowski, Univ. du Québec en Outaouais (Canada)

Published in SPIE Proceedings Vol. 8903:
Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2013
Ryszard S. Romaniuk, Editor(s)

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