The dark current characterization of In_xGa_1-xAs with x=0.78 have been investigated. Meanwhile, the dark current related deep level trap with E_t= 0.26 eV is detected by using Deep-Level Transient Spectroscopy (DLTS). 2D simulation of dark current shows that SRH recombination, trap-assisted tunneling and band-to-band tunneling currents are the main contributors to the dark current of In_xGa_1-xAs( x=0.78) detector. To further improve the dark current characteristic, we need to improve the material growth.

Date Published: 11 September 2013
PDF: 6 pages
Proc. SPIE 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications, 89075A (11 September 2013); doi: 10.1117/12.2034957

Published in SPIE Proceedings Vol. 8907:
International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications
Haimei Gong; Zelin Shi; Qian Chen; Jin Lu, Editor(s)