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Proceedings Paper

Research of extended-wavelength 64x64 In0.83Ga0.17As focal plane arrays
Author(s): Ming Shi; Tao Li; Xiumei Shao; Xue Li; Haimei Gong
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Paper Abstract

Planar 64x64 In0.83Ga0.17As focal plane arrays (FPA) were fabricated in this paper. The properties of In0.83Ga0.17As photodetectors such as I-V, responsivity, detectivity were characterized. Theoretical analysis and measurement of the dark current behavior of the detectors at 200-300K were presented. The typical bad pixels caused by excessive dark current were analyzed, the result shows that they are mainly caused by more ohmic current and trap-assisted tunneling current component. Dark current density is 0.986μA/cm2 at an operating temperature of 200K and a bias voltage of -10 mV. The relative spectral response is in the range of 1.38 μm to 2.6 μm at 280K. The peak spectral response wavelength and quantum efficiency are 2.2 μm and 71.2% at 280K respectively. The achieved peak detectivity can reach 4.05x1011cmHz1/2W-1 by thermoelectric cooling at 200K.

Paper Details

Date Published: 11 September 2013
PDF: 7 pages
Proc. SPIE 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications, 890755 (11 September 2013); doi: 10.1117/12.2034923
Show Author Affiliations
Ming Shi, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Tao Li, Shanghai Institute of Technical Physics (China)
Xiumei Shao, Shanghai Institute of Technical Physics (China)
Xue Li, Shanghai Institute of Technical Physics (China)
Haimei Gong, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 8907:
International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications
Haimei Gong; Zelin Shi; Qian Chen; Jin Lu, Editor(s)

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