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Proceedings Paper

Effect of InGaAs strain reducing layer and rapid thermal annealing on the properties of InAs/GaAs quantum
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Paper Abstract

In this study, uniform InAs QDs were grown on the GaAs (001) substrate by MBE by the S-K mode. The effects of strain reducing layer and rapid thermal anneling on the optical properties of InAs/(In)GaAs QDs were investigated by PL measurements. The annealing results in PL peak energy red-shift which strongly depends on In composition of InxGaAs strained reducing layer , QDs with lower density and/or capped by an InGaAs layer are very sensitive to the annealing. At given annealing conditions, PL peak energy blue-shift of low-density QDs is much larger than that of high density QDs.

Paper Details

Date Published: 11 September 2013
PDF: 5 pages
Proc. SPIE 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications, 890753 (11 September 2013); doi: 10.1117/12.2034902
Show Author Affiliations
Dan Shi, Changchun Univ. of Science and Technology (China)
Ming-hui You, Aviation Univ. of Air Force (China)
Zhan-Guo Li, Changchun Univ. of Science and Technology (China)
Guo-jun Liu, Changchun Univ. of Science and Technology (China)
Lin Li, Changchun Univ. of Science and Technology (China)
Zhong-liang Qiao, Changchun Univ. of Science and Technology (China)
Xiao-hui Ma, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 8907:
International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications
Haimei Gong; Zelin Shi; Qian Chen; Jin Lu, Editor(s)

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