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Proceedings Paper

Effect of gamma irradiation on the performance of InGaAs infrared detectors
Author(s): Xing Huang; Tao Li; Xiu-mei Shao; Xue Li; Hai-mei Gong
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Paper Abstract

Effect of γ-ray irradiations on the performance of InGaAs infrared detectors was studied. Planar-type 24×1 linear detector arrays were fabricated on n-InP/n-In0.53Ga0.47As/n-InP epitaxial structure by sealed-ampoule diffusion method. The InGaAs detectors were irradiated by 100krad, 300krad γ-ray at 40rad/s. The dark currents increased about 170%, 300% respectively and both decreased about 23% at the 8th hours and about 40% at the 22th hour after irradiation. Then the dark currents almost remained stable until 10 days after irradiation. Current-Voltage characteristics of the planar-type detector were analyzed. The current mechanisms were dominated by diffusion current, shunts current and generation-recombination current before irradiation. The γ irradiation resulted to increase these three current components. Ten days after irradiation, three current components all recovered partially. Capacitance-Voltage characteristics were measured before and after irradiation. Effective doping densities (Neff) of InGaAs layer were deduced by fitting 1/C2-V curves. Neff of detectors which were irradiated by 100krad γ-ray increased after irradiation and remained the same until 10 days after irradiation. Neff of detectors which were irradiated by 300krad γ-ray unchanged after irradiation. The response spectrums both moved slightly towards shorter wavelength after irradiation and stayed the same until at least 10 days after irradiation.

Paper Details

Date Published: 11 September 2013
PDF: 7 pages
Proc. SPIE 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications, 890751 (11 September 2013); doi: 10.1117/12.2034898
Show Author Affiliations
Xing Huang, Shanghai Institute of Technical Physics (China)
Key Lab. of Infrared Imaging Materials and Detectors (China)
Tao Li, Shanghai Institute of Technical Physics (China)
Key Lab. of Infrared Imaging Materials and Detectors (China)
Xiu-mei Shao, Shanghai Institute of Technical Physics (China)
Key Lab. of Infrared Imaging Materials and Detectors (China)
Xue Li, Shanghai Institute of Technical Physics (China)
Key Lab. of Infrared Imaging Materials and Detectors (China)
Hai-mei Gong, Shanghai Institute of Technical Physics (China)
Key Lab. of Infrared Imaging Materials and Detectors (China)


Published in SPIE Proceedings Vol. 8907:
International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications
Haimei Gong; Zelin Shi; Qian Chen; Jin Lu, Editor(s)

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