ZnS thin films were prepared on HgCdTe substrates by thermal evaporation and megnetron sputtering deposition technique. The morphology, structure, composition, and optical properties of two kinds of ZnS thin films were studied by scanning electron microscope(SEM), X-ray diffraction(XRD), energy dispersive X-ray analysis(EDX) and fourier transform infrared(FTIR) spectrometer. Then the HgCdTe MIS devices using ZnS thin film as insulating layer were successfully fabricated. The C-V measurement of MIS devices was used to study electrical characteristics of the ZnS/HgCdTe interface. The experimental results show that, the ZnS thin films by thermal evaporation and megnetron sputtering both have good transmission characteristics in infrared waveband and close atomic ratios of Zn/S. The former one exhibits zincblende structure and a phenomenon of layer growth, but the latter one exhibits wurtzite structure and an obvious phenomenon of island growth. It is also found that, the former one has less fixed charge density than the latter one.

Date Published: 11 September 2013
PDF: 6 pages
Proc. SPIE 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications, 890742 (11 September 2013); doi: 10.1117/12.2034530

Published in SPIE Proceedings Vol. 8907:
International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications
Haimei Gong; Zelin Shi; Qian Chen; Jin Lu, Editor(s)