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Proceedings Paper

Fabrication and performance of InAs/GaSb type-II superlattices mid-wavelength infrared detectors
Author(s): Li-peng Yang; Jun Deng; Yan-li Shi; Yong-yuan Chen; Bo Wu
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Paper Abstract

Infrared photodetectors were widely applied in satellite detection, infrared-guided, infrared early warning and infrared imaging and so on. Currently, InAs/GaSb type-II superlattices (T2SLs) photodetectors have been attracted by their unique band-structure and potential applications. In this paper, the InAs/GaSb T2SLs photodetectors in mid-wavelength infrared (MWIR) spectral range were fabricated with p-i-n structure, and the process parameters were optimized. The multilayer structure was grown on GaSb substrate by Molecular Beam Epitaxy (MBE). The active area of this photodetector was 260μm×260μm, and the sidewall of mesa was protected by SiO2 layer. The thickness of adsorption layer was 1060 nm. To reserve more incident area and to avoid the damage caused by welding process, the pad of electrodes were designed under the mesa. A annular electrode was designed to shorten the transmission time of carriers to improve the collection efficiently. The cut-off wavelength λc of the detector was 4.2μm@77K, and the dark current density was measured as 1.07×10-3 A/cm2@Vb=-0.1V. The peak of specific blackbody detectivity (D*) was equal to 1.05×1010 cmHz1/2/W at zero-bias.

Paper Details

Date Published: 11 September 2013
PDF: 8 pages
Proc. SPIE 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications, 890741 (11 September 2013); doi: 10.1117/12.2034514
Show Author Affiliations
Li-peng Yang, Beijing Univ. of Technology (China)
Jun Deng, Beijing Univ. of Technology (China)
Yan-li Shi, Kunming Institute of Physics (China)
Yong-yuan Chen, Beijing Univ. of Technology (China)
Bo Wu, Beijing Univ. of Technology (China)

Published in SPIE Proceedings Vol. 8907:
International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications
Haimei Gong; Zelin Shi; Qian Chen; Jin Lu, Editor(s)

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