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Proceedings Paper

Thermal annealing effects on the properties of intersubband absorption in CdS/ZnSe and (CdS/ZnSe)/BeTe II-VI quantum wells
Author(s): Bing-Sheng Li; Ryoichi Akimoto; Aidong Shen
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Paper Abstract

The authors report the study of thermal annealing (TA) effects on the intersubband transitions (ISB-T) properties in (CdS/ZnSe)/BeTe and CdS/ZnSe multiple quantum wells (MQWs). The samples were grown on (001)-GaAs substrates by molecular beam epitaxy. With the increase of annealing temperature, the ISB-T shifts to longer wavelength in (CdS/ZnSe)/BeTe MQWs, but to short wavelength in CdS/ZnSe MQWs. The ISB absorption vanishes at the annealing temperature of 270 °C for CdS/ZnSe QWs while survives to up to 440 °C for (CdS/ZnSe)/BeTe QWs. For (CdS/ZnSe)/BeTe MQWs after 20 minutes of TA, absorption wavelength and intensity become stable. For CdS/ZnSe MQWs, however we observed a blue shift in wavelength accompanied by a decrease of intensity after 45 minutes of TA. Photo-induced ISB-T measurements indicate that the disappearance of ISB absorption results from the loss of free-carriers in the well layers. ω/2θ scan and two-dimensional reciprocal space mapping (2DRSM)) measurements of X-ray diffraction (XRD) indicate that a built-up of tensile strain and interdiffusion at interfacial region in the annealed (CdS/ZnSe)/BeTe heterostructrues. 2DRSM also shows the enhanced structural relaxation in CdS/ZnSe MQWs. Based on the XRD analysis, the effects of TA on the ISB-T in (CdS/ZnSe)/BeTe and CdS/ZnSe MQWs are explained.

Paper Details

Date Published: 11 September 2013
PDF: 9 pages
Proc. SPIE 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications, 89073Y (11 September 2013); doi: 10.1117/12.2034320
Show Author Affiliations
Bing-Sheng Li, Harbin Institute of Technology (China)
Ryoichi Akimoto, National Institute of Advanced Industrial Science and Technology (Japan)
Aidong Shen, The City College of New York (United States)

Published in SPIE Proceedings Vol. 8907:
International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications
Haimei Gong; Zelin Shi; Qian Chen; Jin Lu, Editor(s)

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