
Proceedings Paper
Research of data retention in EEPROM cellsFormat | Member Price | Non-Member Price |
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Paper Abstract
This paper investigates date retention ability of EEPROM cells for a given voltage or temperature by theory and
experiment. The expression of EEPROM date retention is derived. In the temperature acceleration experiment, the
logarithm of device inactivation time have linear ratio with temperature according to Arrhenius formula and the device
life retention was acquired in the various temperature. According to Arrhenius equation, lifetime curve is deduced. In the
electric acceleration experiment, because of the charge leaking on the floating-gate, the threshold voltage would decrease
gradually. In the log-log plot, the decrease efficiency of threshold voltage have linear ratio with time. Under the
assumption that the charge loss mechanism is Fowler-Nordheim tunneling through the thin oxide, date retention time of
EEPROM cells is derived and the experience formula is derived by experiment.
Paper Details
Date Published: 16 August 2013
PDF: 9 pages
Proc. SPIE 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications, 89120V (16 August 2013); doi: 10.1117/12.2033790
Published in SPIE Proceedings Vol. 8912:
International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications
Benkang Chang; Hui Guo, Editor(s)
PDF: 9 pages
Proc. SPIE 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications, 89120V (16 August 2013); doi: 10.1117/12.2033790
Show Author Affiliations
Wei Cheng, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Ni Zhang, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Cang-lu Hu, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Gang-cheng Jiao, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Ni Zhang, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Cang-lu Hu, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Gang-cheng Jiao, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Zhuang Miao, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Ling-yun Fu, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Feng Liu, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Ling-yun Fu, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Feng Liu, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night-Vision Science & Technology Group Co., Ltd. (China)
Published in SPIE Proceedings Vol. 8912:
International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications
Benkang Chang; Hui Guo, Editor(s)
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