
Proceedings Paper
In situ monitoring of resistivity and carrier concentration during molecular beam epitaxy of topological insulator Bi2Se3Format | Member Price | Non-Member Price |
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Paper Abstract
Bismuth selenide (Bi2Se3) is a three-dimensional strong topological insulator of particular interest due to its relatively large bulk band gap (300 meV), single set of topologically non-trivial surface states, and layered
van der Waals structure. However, there are outstanding problems in isolating the surface states of interest
from bulk (trivial) conduction: this problem is frequently attributed to doping from selenium vacancies, and
atmospheric exposure. To address these questions, we have constructed a system capable of growing thin film
bismuth selenide by van der Waals epitaxy with the additional capability to do real time, in situ transport
measurements, specifically resistivity and Hall carrier density. Post growth cooling to 15 K, and controlled
exposure to atmospheric dopants is possible without breaking vacuum. We have demonstrated in-situ electrical
measurements of resistivity and Hall effect which allow monitoring of the charge carrier density and mobility
during growth as well as post-growth without breaking vacuum.
Paper Details
Date Published: 7 December 2013
PDF: 7 pages
Proc. SPIE 8923, Micro/Nano Materials, Devices, and Systems, 89230P (7 December 2013); doi: 10.1117/12.2033659
Published in SPIE Proceedings Vol. 8923:
Micro/Nano Materials, Devices, and Systems
James Friend; H. Hoe Tan, Editor(s)
PDF: 7 pages
Proc. SPIE 8923, Micro/Nano Materials, Devices, and Systems, 89230P (7 December 2013); doi: 10.1117/12.2033659
Show Author Affiliations
Jack Hellerstedt, Monash Univ. (Australia)
Univ. of Maryland, College Park (United States)
J. H. Chen, Univ. of Maryland, College Park (United States)
Dohun Kim, Univ. of Maryland, College Park (United States)
Univ. of Maryland, College Park (United States)
J. H. Chen, Univ. of Maryland, College Park (United States)
Dohun Kim, Univ. of Maryland, College Park (United States)
William G. Cullen, Univ. of Maryland, College Park (United States)
C. X. Zheng, Monash Univ. (Australia)
Michael S. Fuhrer, Monash Univ. (Australia)
Univ. of Maryland, College Park (United States)
C. X. Zheng, Monash Univ. (Australia)
Michael S. Fuhrer, Monash Univ. (Australia)
Univ. of Maryland, College Park (United States)
Published in SPIE Proceedings Vol. 8923:
Micro/Nano Materials, Devices, and Systems
James Friend; H. Hoe Tan, Editor(s)
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