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Proceedings Paper

Patterning of EUVL binary etched multilayer mask
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Paper Abstract

Recently, development of next generation extremely ultraviolet lithography (EUVL) equipment with high-NA (Numerical Aperture) optics for less than hp10nm node is accelerated. While studying more than 0.45 NA, incident angle distribution of EUV light irradiation to mask becomes larger. It induces degradation of exposure margin to form horizontal line pattern (perpendicular to EUV light direction) because of large mask 3D effect. In order to resolve this issue, we evaluate binary etched multilayer mask structure, unlike conventional stacked absorber structure. As a result of improvement of binary etched multilayer mask process, hp40nm line and space pattern on mask (hp10nm on wafer using 4X optics) is demonstrated. This result suggests the capability of high-NA EUVL with 6inch and 4X optics with new mask structure.

Paper Details

Date Published: 1 October 2013
PDF: 6 pages
Proc. SPIE 8880, Photomask Technology 2013, 88802M (1 October 2013); doi: 10.1117/12.2033258
Show Author Affiliations
Kosuke Takai, Toshiba Corp. (Japan)
Takeharu Motokawa, Toshiba Corp. (Japan)
Koji Murano, Toshiba Corp. (Japan)
Takashi Kamo, Toshiba Corp. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 8880:
Photomask Technology 2013
Thomas B. Faure; Paul W. Ackmann, Editor(s)

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