
Proceedings Paper
Potential of mask production process for finer pattern fabricationFormat | Member Price | Non-Member Price |
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Paper Abstract
Photomask used for optical lithography has been developed for purpose of fabrication a pattern along with finer
designed rules and increase the productivity. With regard to pattern fabrication on mask, EB (Electron beam) mask
writer has been used because it has high resolution beam. But in producing photomask, minimum pattern size on mask is
hits a peak around 40nm by the resolution limit of ArF immersion systems. This value is easy to achieve by current EB
writer. So, photomask process with EB writer has gotten attached to increase turnaround time.
In next generation lithography such as EUV (Extreme ultraviolet) lithography and Nano-imprint lithography, it is
enable to fabricate finer pattern beyond the resolution limit of ArF immersion systems. Thereby the pattern on a mask
becomes finer rapidly. According to ITRS 2012, fabrication of finer patterns less than 20nm will be required on EUV
mask and on NIL template. Especially in NIL template, less than 15nm pattern will be required half a decade later. But
today’s development of EB writer is aiming to increase photomask’s productivity, so we will face a difficulty to fabricate
finer pattern in near future.
In this paper, we examined a potential of mask production process with EB writer from the view of finer pattern
fabrication performances. We succeeded to fabricate hp (half-pitch) 17nm pattern on mask plate by using VSB (Variable
Shaped Beam) type EB mask writer with CAR (Chemically Amplified Resist). This result suggests that the photomask
fabrication process has the potential for sub-20nm generation mask production.
Paper Details
Date Published: 9 September 2013
PDF: 8 pages
Proc. SPIE 8880, Photomask Technology 2013, 88802N (9 September 2013); doi: 10.1117/12.2033257
Published in SPIE Proceedings Vol. 8880:
Photomask Technology 2013
Thomas B. Faure; Paul W. Ackmann, Editor(s)
PDF: 8 pages
Proc. SPIE 8880, Photomask Technology 2013, 88802N (9 September 2013); doi: 10.1117/12.2033257
Show Author Affiliations
Keisuke Yagawa, Toshiba Corp. (Japan)
Kunihiro Ugajin, Toshiba Corp. (Japan)
Machiko Suenaga, Toshiba Corp. (Japan)
Yoshihito Kobayashi, Toshiba Corp. (Japan)
Kunihiro Ugajin, Toshiba Corp. (Japan)
Machiko Suenaga, Toshiba Corp. (Japan)
Yoshihito Kobayashi, Toshiba Corp. (Japan)
Takeharu Motokawa, Toshiba Corp. (Japan)
Kazuki Hagihara, Toshiba Corp. (Japan)
Masato Saito, Toshiba Corp. (Japan)
Masamitsu Itoh, Toshiba Corp. (Japan)
Kazuki Hagihara, Toshiba Corp. (Japan)
Masato Saito, Toshiba Corp. (Japan)
Masamitsu Itoh, Toshiba Corp. (Japan)
Published in SPIE Proceedings Vol. 8880:
Photomask Technology 2013
Thomas B. Faure; Paul W. Ackmann, Editor(s)
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