Share Email Print

Proceedings Paper

Potential of mask production process for finer pattern fabrication
Author(s): Keisuke Yagawa; Kunihiro Ugajin; Machiko Suenaga; Yoshihito Kobayashi; Takeharu Motokawa; Kazuki Hagihara; Masato Saito; Masamitsu Itoh
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Photomask used for optical lithography has been developed for purpose of fabrication a pattern along with finer designed rules and increase the productivity. With regard to pattern fabrication on mask, EB (Electron beam) mask writer has been used because it has high resolution beam. But in producing photomask, minimum pattern size on mask is hits a peak around 40nm by the resolution limit of ArF immersion systems. This value is easy to achieve by current EB writer. So, photomask process with EB writer has gotten attached to increase turnaround time. In next generation lithography such as EUV (Extreme ultraviolet) lithography and Nano-imprint lithography, it is enable to fabricate finer pattern beyond the resolution limit of ArF immersion systems. Thereby the pattern on a mask becomes finer rapidly. According to ITRS 2012, fabrication of finer patterns less than 20nm will be required on EUV mask and on NIL template. Especially in NIL template, less than 15nm pattern will be required half a decade later. But today’s development of EB writer is aiming to increase photomask’s productivity, so we will face a difficulty to fabricate finer pattern in near future. In this paper, we examined a potential of mask production process with EB writer from the view of finer pattern fabrication performances. We succeeded to fabricate hp (half-pitch) 17nm pattern on mask plate by using VSB (Variable Shaped Beam) type EB mask writer with CAR (Chemically Amplified Resist). This result suggests that the photomask fabrication process has the potential for sub-20nm generation mask production.

Paper Details

Date Published: 9 September 2013
PDF: 8 pages
Proc. SPIE 8880, Photomask Technology 2013, 88802N (9 September 2013); doi: 10.1117/12.2033257
Show Author Affiliations
Keisuke Yagawa, Toshiba Corp. (Japan)
Kunihiro Ugajin, Toshiba Corp. (Japan)
Machiko Suenaga, Toshiba Corp. (Japan)
Yoshihito Kobayashi, Toshiba Corp. (Japan)
Takeharu Motokawa, Toshiba Corp. (Japan)
Kazuki Hagihara, Toshiba Corp. (Japan)
Masato Saito, Toshiba Corp. (Japan)
Masamitsu Itoh, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 8880:
Photomask Technology 2013
Thomas B. Faure; Paul W. Ackmann, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?