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Proceedings Paper

Application of picosecond optoelectronic semiconductor switching
Author(s): Harald Bergner; Volkmar Brueckner; Matthias Lenzner; Reiner Strobel
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Paper Abstract

We have used the picosecond optoelectronic switching technique to study carrier recombination times and mobilities at different conditions in semiconductors. Recombination times were measured by correlation technique, e.g. linear and non'inear recombination rates. The photoconductivitv method was also used to measure the dependence of the carrier mobility on the applied field strength in GaAs The mobility was determined from the slope of the v(E curve. Using this technique we were able to distinguish between the carrier mobilities in GaAs in different valleys of the conduction band at different preparation conditions. The PS optoelectronic switching technique was also used to measure the response of a fast Dhotodiode of a 6 8Hz transistor and the dispersion of a ps electrical pulse 1on a cable.

Paper Details

Date Published: 1 August 1990
PDF: 5 pages
Proc. SPIE 1268, Applications of Ultrashort Laser Pulses in Science and Technology, (1 August 1990); doi: 10.1117/12.20330
Show Author Affiliations
Harald Bergner, Friedrich Schiller Univ. Jena (Germany)
Volkmar Brueckner, Friedrich Schiller Univ. Jena (Germany)
Matthias Lenzner, Friedrich Schiller Univ. Jena (Germany)
Reiner Strobel, Friedrich Schiller Univ. Jena (Germany)

Published in SPIE Proceedings Vol. 1268:
Applications of Ultrashort Laser Pulses in Science and Technology
Andre Antonetti, Editor(s)

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