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Proceedings Paper

Ultrafast relaxation dynamics of photoexcited carriers in GaAs
Author(s): Ting Gong; William L. Nighan Jr.; Philippe M. Fauchet
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Paper Abstract

We report time-resolved pump-probe measurements of both absorption and refractive index for GaAs thin films with 80 fs time resolution. The probe photon energies are near the band-edge and near the initial excited states, and photoexcited carrier densities are varied from 1017 to 1019 cm3. Our results reveal the instantaneous band gap renormalization and the importance of carrier-carrier scattering and intervalley scattering. Mechanisms which cause an ultrafast change in refractive index are also discussed.

Paper Details

Date Published: 1 August 1990
PDF: 10 pages
Proc. SPIE 1268, Applications of Ultrashort Laser Pulses in Science and Technology, (1 August 1990); doi: 10.1117/12.20327
Show Author Affiliations
Ting Gong, Princeton Univ. (United States)
William L. Nighan Jr., Princeton Univ. (United States)
Philippe M. Fauchet, Princeton Univ. (United States)

Published in SPIE Proceedings Vol. 1268:
Applications of Ultrashort Laser Pulses in Science and Technology
Andre Antonetti, Editor(s)

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