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Proceedings Paper

Characterization of printed CZTSSe films for photovoltaic applications
Author(s): Wei Wu; Yanyan Cao; Jonathan V. Caspar; Qijie Guo; Lynda Johnson; Irina Malajovich; H. David Rosenfeld; Kaushik Roy Choudhury; Lee Silverman
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Paper Abstract

Cu2ZnSn(S, Se)4 (CZTSSe) is a promising alternative absorber material for thin-film photovoltaic applications because of its earth-abundant constituents, tunable band gap, and high optical absorption coefficient. Using binary and ternary chalcogenide nanoparticles as precursors we have developed a chemical route to produce high efficiency CZTSSe photovoltaic (PV) devices via solution based methods. The printed CZTSSe films show an interesting microstructure consisting of an upper micrometer-sized polycrystalline layer (large-grain layer) and a bottom fine-grain layer. In this paper, we present our results on characterization of the layers including composition, electronic and optical properties. Based on the observed properties we develop a numerical model for the CZTSSe PV device and present the simulation results. We anticipate that the combination of detailed characterization and device model will help us better understand the limitations of our current devices and indicate potential improvement paths.

Paper Details

Date Published: 11 September 2013
PDF: 11 pages
Proc. SPIE 8823, Thin Film Solar Technology V, 88230G (11 September 2013); doi: 10.1117/12.2024755
Show Author Affiliations
Wei Wu, DuPont (United States)
Yanyan Cao, DuPont (United States)
Jonathan V. Caspar, DuPont (United States)
Qijie Guo, DuPont (United States)
Lynda Johnson, DuPont (United States)
Irina Malajovich, DuPont (United States)
H. David Rosenfeld, DuPont (United States)
Kaushik Roy Choudhury, DuPont (United States)
Lee Silverman, DuPont (United States)

Published in SPIE Proceedings Vol. 8823:
Thin Film Solar Technology V
Louay A. Eldada; Michael J. Heben, Editor(s)

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