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Proceedings Paper

Step tunneling enhanced asymmetry in metal-insulator-insulator-metal (MIIM) diodes for rectenna applications
Author(s): N. Alimardani; J. F. Conley Jr.
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Paper Abstract

We combine nanolaminate bilayer insulator tunnel barriers (Al2O3/HfO2, HfO2/Al2O3, Al2O3/ZrO2) deposited via atomic layer deposition (ALD) with asymmetric work function metal electrodes to produce MIIM diodes with enhanced I-V asymmetry and non-linearity. We show that the improvements in MIIM devices are due to step tunneling rather than resonant tunneling. We also investigate conduction processes as a function of temperature in MIM devices with Nb2O5 and Ta2O5 high electron affinity insulators. For both Nb2O5 and Ta2O5 insulators, the dominant conduction process is established as Schottky emission at small biases and Frenkel-Poole emission at large biases. The energy depth of the traps that dominate Frenkel-Poole emission in each material are estimated.

Paper Details

Date Published: 25 September 2013
PDF: 10 pages
Proc. SPIE 8824, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion IV, 88240S (25 September 2013); doi: 10.1117/12.2024750
Show Author Affiliations
N. Alimardani, Oregon State Univ. (United States)
J. F. Conley Jr., Oregon State Univ. (United States)

Published in SPIE Proceedings Vol. 8824:
Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion IV
Oleg V. Sulima; Gavin Conibeer, Editor(s)

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