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Proceedings Paper

Using fiber optic probes for photoluminescence and evaluation of an InGaN/GaN epi-wafer
Author(s): Woohyun Jung; Jongki Kim; Hang-Eun Joe; Byung-Kwon Min; Kyunghwan Oh
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Paper Abstract

Photoluminescence is one of the methods used for analyzing the optical characteristics of materials. For components in solid-state lighting such as GaN-based LEDs, the use of an LED structure configuration on a patterned sapphire substrate has shown to be highly effective in improving light-extraction efficiency. We proposed a compact and simple photoluminescence measurement system based on fiber-optic probes that can be scanned over a 20 × 20 μm2 area with a high spatial resolution. We applied the system in morphological study of InGaN/GaN epitaxial layers for LED applications. With this system, we obtained peak intensity, peak wavelength, and full width at half maximum of the emission spectrum.

Paper Details

Date Published: 6 September 2013
PDF: 6 pages
Proc. SPIE 8839, Dimensional Optical Metrology and Inspection for Practical Applications II, 88390C (6 September 2013); doi: 10.1117/12.2024634
Show Author Affiliations
Woohyun Jung, Yonsei Univ. (Korea, Republic of)
Jongki Kim, Yonsei Univ. (Korea, Republic of)
Hang-Eun Joe, Yonsei Univ. (Korea, Republic of)
Byung-Kwon Min, Yonsei Univ. (Korea, Republic of)
Kyunghwan Oh, Yonsei Univ. (Korea, Republic of)

Published in SPIE Proceedings Vol. 8839:
Dimensional Optical Metrology and Inspection for Practical Applications II
Kevin G. Harding; Peisen S. Huang; Toru Yoshizawa, Editor(s)

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