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Proceedings Paper

THz sources using indium phosphide high electron mobility transistors
Author(s): W. R. Deal
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Paper Abstract

In the last few years, InP HEMT maximum frequency of oscillation (fMAX) has pushed well beyond 1 THz (1000 GHz). This implies that solid state amplification is possible to frequencies approaching 1 THz. In this paper, we provide an overview of power amplifier and power generation work which has been done using InP HEMT technology. In particular, power generation has been demonstrated to 0.67 THz

Paper Details

Date Published: 24 September 2013
PDF: 6 pages
Proc. SPIE 8846, Terahertz Emitters, Receivers, and Applications IV, 88460D (24 September 2013); doi: 10.1117/12.2024529
Show Author Affiliations
W. R. Deal, Northrop Grumman Corp. (United States)


Published in SPIE Proceedings Vol. 8846:
Terahertz Emitters, Receivers, and Applications IV
Manijeh Razeghi; Alexei N. Baranov; John M. Zavada, Editor(s)

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