Share Email Print

Proceedings Paper

Interband cascade infrared photodetectors with InAs/GaSb superlattice absorbers
Author(s): Robert T. Hinkey; Hossein Lotfi; Lu Li; Hao Ye; Lin Lei; Rui Q. Yang; Joel C. Keay; Tetsuya D. Mishima; Michael B. Santos; Matthew B. Johnson
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

We present a study of the temperature-dependence of the performance metrics of a set of five GaSb-based MWIR interband cascade infrared photodetectors employing InAs/GaSb superlattice absorbers. The cutoff wavelengths of the detectors varied from 4.3 μm at 78 K to 5.1 μm at 300 K. In this study, the number of stages and absorber thicknesses were varied between the samples. Two of the samples were single-stage devices with long (> 1.0 μm) absorbers, while the other three were multiple-stage detectors with short (< 1.0 μm) absorbers. The detectors were designed so that the incoming signal was traveling in the same direction as the flow of the photo-excited electrons. We experimentally show that multiple-stage detectors with shorter absorbers are able to achieve higher values of RoA and are have a photoresponse that is less sensitive to temperature. This confirms their potential utility for high-temperature detector operation. For the particular samples in this study, the multiple-stage devices were able to achieve better sensitivities above 250 K than the single-stage samples. It is notable that for most of the samples, a fit of the temperaturedependence of the dark current yielded an activation energy slightly larger than half the zero-temperature bandgap. This suggests that there may be an electric field and depletion region in the absorber and the interband transport in this series of detectors is governed by generation-recombination current, even at high temperature. Also, preliminary results of interband cascade infrared photodetectors at longer wavelengths (> 12 μm) are reported.

Paper Details

Date Published: 19 September 2013
PDF: 13 pages
Proc. SPIE 8868, Infrared Sensors, Devices, and Applications III, 886805 (19 September 2013); doi: 10.1117/12.2024521
Show Author Affiliations
Robert T. Hinkey, The Univ. of Oklahoma (United States)
Hossein Lotfi, The Univ. of Oklahoma (United States)
Lu Li, The Univ. of Oklahoma (United States)
Hao Ye, The Univ. of Oklahoma (United States)
Lin Lei, The Univ. of Oklahoma (United States)
Rui Q. Yang, The Univ. of Oklahoma (United States)
Joel C. Keay, The Univ. of Oklahoma (United States)
Tetsuya D. Mishima, The Univ. of Oklahoma (United States)
Michael B. Santos, The Univ. of Oklahoma (United States)
Matthew B. Johnson, The Univ. of Oklahoma (United States)

Published in SPIE Proceedings Vol. 8868:
Infrared Sensors, Devices, and Applications III
Paul D. LeVan; Ashok K. Sood; Priyalal S. Wijewarnasuriya; Arvind I. D'Souza, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?