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Optical mode modulation of AlGaInP multi quantum well laser diodes
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Paper Abstract

We investigate the influence of passivation structure on the optical mode distribution and LI characteristics for the edge emitting AlGaInP-GaInP visible laser diode (LD). For traditional single-layer Si3N4 or SiO2 passivation designs, the modification of dielectric layer thickness can determinate the lateral near-field confinement and change the horizontal far-field (FF) divergence. By increasing the film thickness, the non-radiation absorption come from Au-Ti can be improved and it leads to a narrow FF divergence beam. As continue to increasing the thickness, thicker passivation provides a better confinement factor and then the far-field pattern turn to be wider. For LI characteristics, it is necessary to deposit a thick enough passivation to reduce metal absorption. However, it cause much thermal energy accumulated in the ridge waveguide and deteriorate the quantum efficiency as adopting a too thick dielectric layer. Finally, we demonstrate a high power AlGaInP-GaInP multi quantum wells (MQWs) LD adopted a high-reflectivity passivation to enhance the LI characteristics and keep a suitable far-field divergence angle simultaneously. Under the design of threepair optical thin films, it cannot only avoid the metal absorption but also enhance emitting efficiency and heat dissipation by using a high reflective and good thermal conductive Al2O3/Ta2O5 multilayer. The measured room-temperature threshold current (Ith) and characteristic temperature (T0) can be arrived 44.5mA and 104.2K at 16.4° far-field divergence.

Paper Details

Date Published: 26 September 2013
PDF: 8 pages
Proc. SPIE 8816, Nanoengineering: Fabrication, Properties, Optics, and Devices X, 88160L (26 September 2013);
Show Author Affiliations
Chih-Tsang Hung, National Chiao Tung Univ. (Taiwan)
Shen-Che Huang, National Chiao Tung Univ. (Taiwan)
Tien-Chang Lu, National Chiao Tung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 8816:
Nanoengineering: Fabrication, Properties, Optics, and Devices X
Eva M. Campo; Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)

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